Hangzhou, China

Hui Yu

USPTO Granted Patents = 18 

Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 9(Granted Patents)


Location History:

  • Zhejiang, CN (2022)
  • Hangzhou, CN (2021 - 2024)

Company Filing History:


Years Active: 2021-2025

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18 patents (USPTO):Explore Patents

Title: An Insight into the Innovations of Hui Yu

Introduction

Hui Yu, based in Hangzhou, China, is an accomplished inventor with a remarkable portfolio of 18 patents. His work primarily revolves around semiconductor technology, where he has made significant contributions that enhance the performance and functionality of various semiconductor devices.

Latest Patents

Among his latest patents is a groundbreaking invention titled "Semiconductor structure having a semiconductor substrate and an isolation component." This patent describes a semiconductor structure that consists of a semiconductor substrate divided into regions, with an isolation component designed to enhance the recombination of carriers. The structure effectively facilitates the movement of carriers between the first and second regions, optimizing semiconductor efficiency.

Another notable patent is the "LDMOS transistor and method for manufacturing the same." This invention presents a novel design for an LDMOS transistor, featuring a field oxide layer structure adjacent to a drain region. The patent outlines specifications of the drain oxide layer structure, including adjustments that improve the breakdown voltage performance of the transistor, which is crucial for providing enhanced reliability and performance in high-power applications.

Career Highlights

Hui Yu has made significant strides in the semiconductor industry through his work at Silergy Semiconductor Technology (Hangzhou) Ltd. Additionally, he has contributed to advancements in technology at Zhejiang Lab, solidifying his reputation as an expert in semiconductor innovation.

Collaborations

Throughout his career, Hui has collaborated with esteemed professionals like Meng Wang and Yicheng Du, fostering a creative environment that promotes innovation and the development of cutting-edge technologies. These collaborations have not only enriched his work but have also contributed to the growth of the semiconductor field.

Conclusion

Hui Yu's contributions to semiconductor technology through his innovative patents and collaborative efforts highlight his role as a significant figure in the field of inventions. His work continues to inspire advancements that benefit various industries reliant on semiconductor technology, paving the way for future innovations.

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