The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2023

Filed:

May. 16, 2023
Applicant:

Zhejiang Lab, Hangzhou, CN;

Inventors:

Qiang Zhang, Hangzhou, CN;

Hui Yu, Hangzhou, CN;

Assignee:

ZHEJIANG LAB, Hangzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 10/60 (2013.01); G02F 1/295 (2006.01); G02F 1/31 (2006.01); G02F 1/313 (2006.01);
U.S. Cl.
CPC ...
H04B 10/60 (2013.01); G02F 1/2955 (2013.01); G02F 1/311 (2021.01); G02F 1/3131 (2013.01); G02F 2201/06 (2013.01); G02F 2201/205 (2013.01); G02F 2201/307 (2013.01); G02F 2202/10 (2013.01); G02F 2203/58 (2013.01); G02F 2203/70 (2013.01);
Abstract

A programmable two-dimensional simultaneous multi-beam optically operated phased array receiver chip is manufactured based on silicon-on-insulator (SOI) and indium phosphide (InP) semiconductor manufacturing processes, including the SiN process. The InP-based semiconductor is used for preparing a laser array chip and a semiconductor optical amplifier array chip, the SiN is used for preparing an optical power divider, and the SOI semiconductor is used for preparing a silicon optical modulator, a germanium-silicon detector, an optical wavelength multiplexer, a true delay line, and other passive optical devices. The whole integration of the receiver chip is realized through heterogeneous integration of the InP-based chip and the SOI-based chip. Simultaneous multi-beam scanning can be realized through peripheral circuit programming control. The chip not only can realize two-dimensional multi-beam scanning, but also has strong expansibility, such that the chip can be used for ultra-wideband high-capacity wireless communication and simultaneous multi-target radar recognition systems.


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