The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
May. 17, 2019
Silergy Semiconductor Technology (Hangzhou) Ltd, Zhejiang, CN;
Budong You, Zhejiang, CN;
Meng Wang, Zhejiang, CN;
Hui Yu, Zhejiang, CN;
Yicheng Du, Zhejiang, CN;
Chuan Peng, Zhejiang, CN;
SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD, Hangzhou, CN;
Abstract
A method for manufacturing a laterally diffused metal oxide semiconductor device and a semiconductor device are provided. A body region is formed before forming a gate dielectric layer and a gate conductor, thereby reducing a channel length of the semiconductor device, thus reducing the on-resistance. In addition, a drift region serves as both a region withstanding a high voltage and a diffusion suppression region for suppressing lateral diffusion of the body region, thereby further reducing the channel length of the semiconductor device, thus manufacturing a short-channel semiconductor device.