The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Jun. 26, 2023
Silergy Semiconductor Technology (Hangzhou) Ltd, Hangzhou, CN;
Nan Chen, Hangzhou, CN;
Yicheng Du, Hangzhou, CN;
Pengfei Yin, Hangzhou, CN;
Meng Wang, Hangzhou, CN;
Kai Zhang, Hangzhou, CN;
Hao Zhu, Hangzhou, CN;
Xi Zhou, Hangzhou, CN;
Yunjiao He, Hangzhou, CN;
Silergy Semiconductor Technology (Hangzhou) LTD, Hangzhou, CN;
Abstract
A terminal structure of a bidirectional switching device, where the terminal structure can include: a field plate located on a top surface of a well region and between a first voltage-withstand region and a second voltage-withstand region, where the bidirectional switching device comprises the well region, and the first and second voltage-withstand regions located in the well region; and where a potential is connected to the field plate, in order to decrease an electrical leakage of a parasitic transistor, where the parasitic transistor is formed by the first voltage-withstand region, the well region, and the second voltage-withstand region.