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Nagasaki, Japan

Masayoshi Murata

USPTO Granted Patents = 11 (Patent Applications = 2)

EPO Patents = 1 (Patent Applications = 4)

Average Co-Inventor Count = 4.6

ph-index = 6

Forward Citations = 263(Granted Patents)

Location History:

Nagasaki, JP (1990 - 2002)
Nagasaki-ken, JP (1999 - 2002)

Company Filing History:

Mitsubishi Heavy Industries Limited

Mitsubishi Jukogyo Kabushiki Kaisha

Years Active: 1990-2002

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11 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6456010 - Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus (2002-09-24),

2. 6363881 - Plasma chemical vapor deposition apparatus (2002-04-02),

3. 6353201 - Discharge electrode, RF plasma generation apparatus using the same, and power supply method (2002-03-05),

4. 6344701 - Pulse generator for treating exhaust gas (2002-02-05),

5. 6307146 - Amorphous silicon solar cell (2001-10-23),

6. 6274006 - Apparatus and method for treating exhaust gas and pulse generator used therefor (2001-08-14),

7. 6007681 - Apparatus and method for treating exhaust gas and pulse generator used (1999-12-28),

8. 5423915 - Plasma CVD apparatus including rotating magnetic field generation means (1995-06-13),

9. 5405447 - Plasma CVD apparatus (1995-04-11),

10. 5261962 - Plasma-chemical vapor-phase epitaxy system comprising a planar antenna (1993-11-16),

11. 4901669 - Method and apparatus for forming thin film (1990-02-20),

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