The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 16, 1993

Filed:

Jun. 03, 1992
Applicant:
Inventors:

Kazutoshi Hamamoto, Nagasaki, JP;

Satoshi Uchida, Nagasaki, JP;

Masayoshi Murata, Nagasaki, JP;

Yoshiaki Takeuchi, Nagasaki, JP;

Masaru Kodama, Nagasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
118723 ; 118725 ;
Abstract

A plasma-chemical vapor-phase epitaxy system or a chemical vapor deposition (CVD) system can produce a large thin film of good quality. The CVD system includes a vacuum container having a quartz glass window, a substrate disposed within the vacuum container as opposed to the window, an antenna type discharge electrode disposed outside of the vacuum container as opposed to the window, and a high-frequency power supply for feeding electric power to the same electrode. In this way, by disposing an electrode outside of a container and exciting the reaction gas with high-frequency electromagnetic waves, a large thin film of good quality can be formed.


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