The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2001
Filed:
Sep. 23, 1999
Applicant:
Inventors:
Yoshiaki Takeuchi, Nagasaki, JP;
Masayoshi Murata, Nagasaki, JP;
Akemi Takano, Nagasaki, JP;
Tatsuyuki Nishimiya, Nagasaki, JP;
Syouji Morita, Yokohama, JP;
Tatsufumi Aoi, Nagasaki, JP;
Tatsuji Horioka, Tokyo, JP;
Assignee:
Mitsubishi Heavy Industries, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/10376 ;
U.S. Cl.
CPC ...
H01L 3/10376 ;
Abstract
An amorphous silicon solar cell includes a substrate, a transparent electrode formed on this substrate, a power-generating film formed on this transparent electrode, and a back-side electrode formed on this power-generating film. The power-generating film is formed by sequentially stacking p-type/i-type/n-type hydrogenated amorphous silicon layers. The defect density of the i-type hydrogenated amorphous silicon layer is less than 10,defects/cc.