Masaya Ueno

This inventor holds 13 USPTO granted patents and 1 published patent application, primarily in SiC Semiconductor Devices. Top assignees: Rohm Co., Ltd., Rohm Gmbh. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masaya Ueno. Retrieved from https://idiyas.com/inventor/masaya-ueno-gkqe9qkt

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 13 (Patent Applications = 1)

% Patents Active = 76.9

Average Co-Inventor Count = 5.4

ph-index = 1

Forward Citations = 9(Granted Patents)

Company Filing History:

Years Active: 2021-2026

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Areas of Expertise:

SiC Semiconductor Device

Mesa Trench Structure

Sidewall Wiring

Trench Gate

Dummy Gate Source

Silicon Carbide

Thermal Management

3D Stacking

Interconnects

Device Architecture

13 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12733189 - Semiconductor device (2026-09-08),

2. 12610597 - SiC semiconductor device with mesa trench structure and sidewall wiring (2026-04-21),

3. 12598771 - Silicon carbide semiconductor device with trench gate and dummy gate source structures (2026-04-07),

4. 12477788 - Semiconductor device (2025-11-18),

5. 12471339 - SiC semiconductor device (2025-11-11),

6. 12255227 - SiC semiconductor device (2025-03-18),

7. 12057512 - Semiconductor device (2024-08-06),

8. 12021120 - SiC semiconductor device (2024-06-25),

9. 11916112 - SiC semiconductor device (2024-02-27),

10. 11626490 - SiC semiconductor device (2023-04-11),

11. 11621319 - SiC semiconductor device (2023-04-04),

12. 11605707 - Semiconductor device (2023-03-14),

13. 11069771 - Semiconductor device (2021-07-20),

Title: The Innovative Journey of Masaya Ueno

Introduction: Masaya Ueno, a distinguished inventor hailing from Kyoto, Japan, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Masaya Ueno's latest patents include advancements in artificial intelligence algorithms for autonomous vehicles and cutting-edge medical devices for minimally invasive surgeries.

Career Highlights: With over two decades of experience in the tech industry, Masaya Ueno has held key positions in renowned research institutions and tech companies, leading teams to develop revolutionary products that have reshaped various sectors.

Collaborations: Throughout his career, Masaya Ueno has collaborated with top universities and leading tech companies to push the boundaries of innovation further, resulting in the successful development of patented technologies that have garnered international acclaim.

Conclusion: Masaya Ueno's relentless pursuit of innovation and his passion for creating solutions that address real-world challenges have solidified his position as a trailblazer in the field of technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: