The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Jul. 16, 2021
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Kenji Yamamoto, Kyoto, JP;

Seigo Mori, Kyoto, JP;

Hiroaki Shiraga, Kyoto, JP;

Yuki Nakano, Kyoto, JP;

Masaya Ueno, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/40 (2006.01); H10D 30/66 (2025.01); H10D 62/10 (2025.01); H10D 62/832 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 62/8325 (2025.01); H10D 30/668 (2025.01); H10D 62/127 (2025.01); H10D 64/513 (2025.01); H10D 64/519 (2025.01);
Abstract

A SiC semiconductor device includes a SiC chip having a main surface that includes a first surface, a second surface hollowed in a thickness direction outside the first surface, and a connecting surface connecting the first surface and the second surface, and in which a mesa is defined by the first surface, the second surface and the connecting surface, a trench structure formed at the first surface such as to be exposed from the connecting surface, and a sidewall wiring that is formed on the second surface such as to cover the connecting surface and that is electrically connected to the trench structure.


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