The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Mar. 08, 2023
Rohm Co., Ltd., Kyoto, JP;
Masaya Ueno, Kyoto, JP;
Yuki Nakano, Kyoto, JP;
Sawa Haruyama, Kyoto, JP;
Yasuhiro Kawakami, Kyoto, JP;
Seiya Nakazawa, Kyoto, JP;
Yasunori Kutsuma, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.