Silicon carbide semiconductor device with trench gate and dummy gate source structures

Abstract

A SiC semiconductor device includes SiC chip having main surface that includes first surface, second surface hollowed in thickness direction at first depth outside the first surface, and a connecting surface connecting the first surface and the second surface, and in which a mesa is defined by the first surface, the second surface and the connecting surface, a transistor structure formed at an inward portion of the first surface, the transistor structure including a trench gate structure that has a second depth less than the first depth and a trench source structure that has a third depth exceeding the second depth and that adjoins the trench gate structure in one direction, and a dummy structure formed at a peripheral edge portion of the first surface, the dummy structure including a plurality of dummy trench source structures which have the third depth and adjoin each other in the one direction.