The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Apr. 01, 2022
Applicant:
Rohm Co., Ltd., Kyoto, JP;
Inventors:
Assignee:
ROHM CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/47 (2006.01); H01L 23/00 (2006.01); H01L 29/06 (2006.01); H01L 29/872 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 24/05 (2013.01); H01L 29/0692 (2013.01); H01L 29/47 (2013.01); H01L 29/0619 (2013.01); H01L 29/1608 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05638 (2013.01); H01L 2224/05647 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/0133 (2013.01);
Abstract
A semiconductor device includes: a semiconductor layer including a semiconductor substrate and an epitaxial layer of a first conductivity type formed on the semiconductor substrate; a surface electrode containing at least one selected from the group consisting of an aluminum alloy and aluminum and formed on the semiconductor layer; and an impurity region of a second conductivity type formed on a surface layer portion of the epitaxial layer and forming a pn junction with the epitaxial layer, wherein the surface electrode includes a Schottky portion that is in contact with a surface of the semiconductor layer and forms a Schottky junction with the epitaxial layer.