Masaya Nagato

Title: The Innovative Contributions of Masaya Nagato

Introduction

Masaya Nagato is a prominent inventor based in Toyama, Japan, known for his significant contributions to the field of semiconductor technology. With a total of 12 patents to his name, Nagato has developed innovative methods and apparatuses that enhance semiconductor manufacturing processes.

Latest Patents

Among his latest patents, Nagato has introduced a processing method that involves forming an oxide film on a substrate through a series of carefully controlled cycles. This method includes the formation of a first oxide film containing an atom X, achieved by non-simultaneously performing a first cycle that involves creating a first layer with a functional group bonded to atom X, followed by oxidizing this layer to form a second layer. Additionally, he has developed a technique for manufacturing semiconductor devices that effectively removes by-products before they can deposit in the exhaust part of the process chamber. This method includes maintaining an inner pressure in the chamber and adjusting it to atmospheric pressure while supplying a predetermined gas to bypass the chamber.

Career Highlights

Nagato has worked with notable companies in the semiconductor industry, including Kokusai Electric Corporation and Hitachi Kokusai Electric Inc. His experience in these organizations has allowed him to refine his skills and contribute to advancements in semiconductor technology.

Collaborations

Throughout his career, Nagato has collaborated with esteemed colleagues such as Yoshitomo Hashimoto and Katsuyoshi Harada. These partnerships have fostered a creative environment that has led to the development of groundbreaking technologies.

Conclusion

Masaya Nagato's innovative work in semiconductor manufacturing has made a lasting impact on the industry. His patents reflect a deep understanding of the complexities involved in semiconductor processes, showcasing his role as a key figure in technological advancements.