The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2018

Filed:

Feb. 16, 2017
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Masaya Nagato, Toyama, JP;

Koei Kuribayashi, Toyama, JP;

Kenji Kameda, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/44 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4405 (2013.01); C23C 16/401 (2013.01); C23C 16/4408 (2013.01); C23C 16/45527 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01);
Abstract

A technique for improving cleaning efficiency after a film forming process is performed is provided. Provided is a method of cleaning a processing chamber after a formation of a film on a substrate, the method including: (a) supplying a gas containing hydrogen and fluorine into the processing chamber heated to a first temperature; (b) elevating an inner temperature of the processing chamber to a second temperature higher than the first temperature; and (c) supplying a gas containing fluorine into the processing chamber heated to the second temperature, wherein the first temperature is a temperature whereat the gas containing fluorine is not activated, and the second temperature is a temperature whereat the gas containing fluorine is activated.


Find Patent Forward Citations

Loading…