The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

May. 27, 2020
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Masanori Okuno, Toyama, JP;

Tatsuya Yotsutani, Toyama, JP;

Masaya Nagato, Toyama, JP;

Toshihiko Yonejima, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/44 (2006.01); B08B 5/00 (2006.01); B08B 9/027 (2006.01); B08B 9/032 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4405 (2013.01); B08B 5/00 (2013.01); B08B 9/027 (2013.01); C23C 16/4412 (2013.01); H01L 21/67017 (2013.01); B08B 9/0328 (2013.01); C23C 16/4408 (2013.01);
Abstract

Described herein is a technique capable of removing by-products before the by-products are deposited to an exhaust part. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device including: (a) processing a substrate while maintaining an inner pressure of a process chamber at a process pressure by adjusting a valve configured to adjust the inner pressure of the process chamber; (b) changing the inner pressure of the process chamber from the process pressure to an atmospheric pressure; and (c) supplying a predetermined gas to a downstream side of the valve to bypass the process chamber while performing (b).


Find Patent Forward Citations

Loading…