The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2020
Filed:
Mar. 10, 2017
Applicant:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Inventors:
Assignee:
Kokusai Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/34 (2006.01); C23C 16/36 (2006.01); C23C 16/455 (2006.01); C23C 16/448 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/30 (2013.01); C23C 16/308 (2013.01); C23C 16/345 (2013.01); C23C 16/36 (2013.01); C23C 16/4482 (2013.01); C23C 16/45527 (2013.01); C23C 16/45531 (2013.01); C23C 16/45544 (2013.01); C23C 16/52 (2013.01); H01L 21/0217 (2013.01); H01L 21/02126 (2013.01); H01L 21/02167 (2013.01); H01L 21/02211 (2013.01); H01L 21/02362 (2013.01);
Abstract
The present disclosure provides a technique including a method of manufacturing a semiconductor device, which is capable of improving the characteristics of a film formed on a substrate. The method of manufacturing a semiconductor device may include: (a) forming a first film containing a predetermined element, oxygen, carbon and nitrogen on a substrate; and (b) forming a second film thinner than the first film on a top surface of the first film, the second film having an oxygen concentration lower than an oxygen concentration of the first film or having oxygen and carbon concentrations lower than oxygen and carbon concentrations of the first film.