The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2021
Filed:
May. 17, 2018
Hitachi Kokusai Electric Inc., Tokyo, JP;
Yoshitomo Hashimoto, Toyama, JP;
Masanori Nakayama, Toyama, JP;
Masaya Nagato, Toyama, JP;
Tatsuru Matsuoka, Toyama, JP;
Hiroki Tamashita, Toyama, JP;
Takafumi Nitta, Toyama, JP;
Satoshi Shimamoto, Toyama, JP;
KOKUSAI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes: providing a substrate that includes a surface exposing a first film containing silicon, oxygen, carbon and nitrogen and having an oxygen atom concentration higher than a silicon atom concentration, which is higher than a carbon atom concentration, which is equal to or higher than a nitrogen atom concentration; and changing a composition of a surface of the first film so that the nitrogen atom concentration becomes higher than the carbon atom concentration on the surface of the first film, by supplying a plasma-excited nitrogen-containing gas to the surface of the first film.