Toyama, Japan

Hiroki Tamashita

This inventor holds 1 USPTO granted patent. Top assignee: Kokusai Electric Corporation. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroki Tamashita. Retrieved from https://idiyas.com/inventor/hiroki-tamashita

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Hiroki Tamashita: Innovator in Semiconductor Manufacturing

Introduction

Hiroki Tamashita is a prominent inventor based in Toyama, Japan. He has made significant contributions to the field of semiconductor manufacturing. His innovative approach has led to the development of a unique method that enhances the efficiency of semiconductor devices.

Latest Patents

Hiroki Tamashita holds 1 patent for his invention titled "Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium." This patent describes a method that involves providing a substrate with a specific composition of silicon, oxygen, carbon, and nitrogen. The process includes changing the surface composition of the first film to increase the nitrogen atom concentration, thereby improving the overall performance of semiconductor devices.

Career Highlights

Tamashita is currently employed at Kokusai Electric Corporation, where he continues to work on advancing semiconductor technologies. His expertise in substrate processing has positioned him as a key player in the industry. His innovative methods are paving the way for more efficient manufacturing processes.

Collaborations

Hiroki Tamashita collaborates with notable colleagues, including Yoshitomo Hashimoto and Masanori Nakayama. Their combined efforts contribute to the ongoing advancements in semiconductor technology.

Conclusion

Hiroki Tamashita's work in semiconductor manufacturing exemplifies the spirit of innovation. His patented methods are crucial for the future of the industry, showcasing his dedication to enhancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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