Hanno, Japan

Masato Itoi

This inventor holds 5 USPTO granted patents and 1 EPO patent. Top assignee: Shindengen Electric Manufacturing Company Limited. Active years: 2004-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masato Itoi. Retrieved from https://idiyas.com/inventor/masato-itoi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 60.0


Average Co-Inventor Count = 3.7

ph-index = 3

Forward Citations = 51(Granted Patents)


Location History:

  • Saitama-ken, JP (2008)
  • Hanno, JP (2004 - 2011)

Company Filing History:


Years Active: 2004-2011

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5 patents (USPTO):Explore Patents

Title: Masato Itoi: Innovator in Semiconductor Technology

Introduction

Masato Itoi is a prominent inventor based in Hanno, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on enhancing the performance and efficiency of power semiconductor devices.

Latest Patents

One of his latest patents is the trench gate power semiconductor device. This innovative trench gate power MOSFET includes an n-type epitaxial layer and a p-type body region formed near the upper surface of the n-type epitaxial layer. A plurality of trenches are created to reach the n-type epitaxial layer from the upper surface of the p-type body region, with gates formed in these trenches. The design allows for effective collection of holes generated in a cell region, thereby increasing the speed of the switching operation.

Another notable patent is the semiconductor device for reducing forward voltage by using an Ohmic contact. This invention involves MOS FETs formed by a drain layer, a drift layer, P-type body areas, N-type source areas, gate electrodes, a source electrode film, and a drain electrode film. In parallel to the MOS FETs, the drain layer, drift layer, P-type diffusion area, and source electrode film form a diode. The total amount of P-type impurities in each P-type body area exceeds that in the P-type diffusion area, enhancing the device's performance.

Career Highlights

Masato Itoi is currently associated with Shindengen Electric Manufacturing Company Limited, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of power semiconductor devices.

Collaborations

He collaborates with notable coworkers such as Yuji Watanabe and Toshiyuki Takemori, contributing to a dynamic and innovative work environment.

Conclusion

Masato Itoi's contributions to semiconductor technology through his patents and work at Shindengen Electric Manufacturing Company Limited highlight his role as a key innovator in the field. His inventions continue to influence the efficiency and performance of power semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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