The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2008
Filed:
Aug. 25, 2004
Toshiyuki Takemori, Saitama-ken, JP;
Masato Itoi, Saitama-ken, JP;
Yuji Watanabe, Saitama-ken, JP;
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Abstract
The capacitance between the gate electrode film and the drain layer of semiconductor device is reduced while keeping the resistance low, with the breakdown voltage of the gate insulating film also being maintained at a sufficient level. A trenchis formed with the bottom of the trench at a comparatively shallow position in an N-epitaxial layerThe thickness of a bottom surface partof a gate electrode filmis formed so as to be thicker than other parts of the gate electrode filmAlso, when a P type body layeris formed, an interface between the P type body layerand an N-epitaxial layeris located at a deeper position than a bottom end of the gate electrode film