The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2004
Filed:
Apr. 01, 2002
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ;
Abstract
The capacitance between the gate electrode film and the drain layer of semiconductor device is reduced while keeping the resistance low, with the withstand voltage of the gate insulating film also being maintained at a sufficient level. A trench is formed with the bottom of the trench at a comparatively shallow position in an N-epitaxial layer . The thickness of a bottom surface part of a gate electrode film is formed so as to be thicker than other parts of the gate electrode film . Also, when a P type body layer is formed, an interface between the P type body layer and an N-epitaxial layer is located at a deeper position than a bottom end of the gate electrode film