The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Feb. 16, 2005
Toshiyuki Takemori, Hanno, JP;
Yuji Watanabe, Hidaka, JP;
Fuminori Sasaoka, Hanno, JP;
Kazushige Matsuyama, Tsukuba, JP;
Kunihito Ohshima, Kawagoe, JP;
Masato Itoi, Hanno, JP;
Toshiyuki Takemori, Hanno, JP;
Yuji Watanabe, Hidaka, JP;
Fuminori Sasaoka, Hanno, JP;
Kazushige Matsuyama, Tsukuba, JP;
Kunihito Ohshima, Kawagoe, JP;
Masato Itoi, Hanno, JP;
Shindengen Electric Manufacturing Co, Ltd., Tokyo, JP;
Abstract
MOS FETs are formed by a drain layer, a drift layer, P-type body areas, N-type source areas, gate electrodes, a source electrode film, and a drain electrode film. In parallel to the MOS FETs, the drain layer, the drift layer, the P-type diffusion area, and the source electrode filmform a diode. The source electrode filmand the P-type diffusion areaform an Ohmic contact. The total amount of impurities, which function as P-type impurities in each P-type body area, is larger than the total amount of impurities, which function as P-type impurities in the P-type diffusion area