Masatake Nagaya

Title: Masatake Nagaya: Innovator in Semiconductor Technology

Introduction

Masatake Nagaya is a prominent inventor based in Seto, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the growth and processing of single crystal silicon carbide (SiC). With a total of 6 patents to his name, Nagaya's work has advanced the capabilities of semiconductor manufacturing.

Latest Patents

Nagaya's latest patents include innovative technologies such as a seed crystal for single crystal 4H-SiC growth and a method for processing the same. This seed crystal is designed as a disk-shaped component with a diameter exceeding 150 mm and a specific thickness range. One surface of the seed crystal is a mirror surface, while the other has a roughness average (Ra) greater than 10 nm. Additionally, he has developed a wafer processing method, which involves slicing an ingot into a wafer and polishing its surface to achieve a planar finish.

Career Highlights

Throughout his career, Masatake Nagaya has worked with notable companies, including Denso Corporation and Nippondenso Co., Ltd. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Nagaya has collaborated with several talented individuals in his field, including Masaki Matsui and Akinari Fukaya. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Masatake Nagaya's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in the field, paving the way for future developments in semiconductor manufacturing.