The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2010

Filed:

Oct. 28, 2008
Applicants:

Masatake Nagaya, Seto, JP;

Yuuichi Takeuchi, Obu, JP;

Katsuhiro Nagata, Nishikamo-gun, JP;

Inventors:

Masatake Nagaya, Seto, JP;

Yuuichi Takeuchi, Obu, JP;

Katsuhiro Nagata, Nishikamo-gun, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a silicon carbide semiconductor apparatus is disclosed. According to the method, an element structure is formed on a front surface side of a semiconductor substrate. A rear surface of the semiconductor substrate is grinded or polished in a direction parallel to a flat surface of a table. A front surface of the semiconductor substrate is grinded and polished in a direction parallel to the rear surface after the rear surface of the semiconductor substrate is grinded or polished.


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