The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 1998
Filed:
Dec. 21, 1995
Applicant:
Inventors:
Masaki Matsui, Nagoya, JP;
Masatake Nagaya, Nishikamo-gun, JP;
Akinari Fukaya, Obu, JP;
Hiroaki Himi, Nagoya, JP;
Assignee:
Nippondenso Co., Ltd., Kariya, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438 17 ; 438-5 ; 438 13 ; 438659 ; 438692 ; 216 52 ; 451288 ;
Abstract
In a dielectric isolation substrate, an end point of a polishing process for selective polishing for forming an SOI layer is detected with a high precision. When polishing a wafer with a polishing pad, the temperature of a region of the polishing pad having polished the wafer at a position immediately thereafter is detected by a temperature sensor and the selective polishing process is ended by discriminating that the rate of variation in the detected temperature has changed from a positive to a negative state and then to a fixed saturated state.