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For the Inventor, By the Inventor

Hyogo, Japan

Masao Nagatomo

USPTO Granted Patents = 18

Average Co-Inventor Count = 3.3

ph-index = 11

Forward Citations = 259(Granted Patents)


Location History:

  • Itami, JP (1982)
  • Hyogo, JP (1987 - 1994)
  • Hyogo-ken, JP (1999)

Company Filing History:

goldMedal18 out of 21,351 
 
Mitsubishi Denki Kabushiki Kaisha
 patents

Years Active: 1982-1999

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18 patents (USPTO):Explore Patents
1. 5888851 - Method of manufacturing a semiconductor device having a circuit portion (1999-03-30),
2. 5323343 - DRAM device comprising a stacked type capacitor and a method of (1994-06-21),
3. 5300444 - Method of manufacturing a semiconductor device having a stacked (1994-04-05),
4. 5241212 - Semiconductor device having a redundant circuit portion and a (1993-08-31),
5. 5164806 - Element isolating structure of semiconductor device suitable for high (1992-11-17),
6. 5153689 - Semiconductor memory device having bit lines formed of an (1992-10-06),
7. 5112771 - Method of fibricating a semiconductor device having a trench (1992-05-12),
8. 5047359 - Method of implanting into the sidewall of a trench by rotating the wafer (1991-09-10),
9. 4985368 - Method for making semiconductor device with no stress generated at the (1991-01-15),
10. 4984055 - Semiconductor device having a plurality of conductive layers and (1991-01-08),
11. 4956692 - Semiconductor device having an isolation oxide film (1990-09-11),
12. 4956310 - Semiconductor memory device and fabricating method thereof (1990-09-11),
13. 4905068 - Semiconductor device having interconnection layers of T-shape cross (1990-02-27),
14. 4894695 - Semiconductor device with no stress generated at the trench corner (1990-01-16),
15. 4763182 - Semiconductor memory device with deep bit-line channel stopper (1988-08-09),

Title: The Innovative Contributions of Masao Nagatomo

Introduction

Masao Nagatomo is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 18 patents. His work has been instrumental in advancing the capabilities of semiconductor devices, particularly in the areas of manufacturing and design.

Latest Patents

One of Nagatomo's latest patents is a method of manufacturing a semiconductor device that includes a specific circuit portion and a spare redundant circuit portion. This innovative semiconductor device features a silicon substrate, an interlayer insulating film, an LT fuse, interconnection layers, a testing electrode, and a protection film. The design allows for the substitution of a defective specific part with a redundant circuit portion without damaging the interconnection layers. Another notable patent involves a DRAM device that comprises a memory cell array and a peripheral circuit with a MOS transistor. This design effectively suppresses leakage of charge from the capacitor, enhancing the performance of the memory cells.

Career Highlights

Masao Nagatomo is associated with Mitsubishi Electric Corporation, where he has contributed to various groundbreaking projects in semiconductor technology. His expertise and innovative approach have positioned him as a key figure in the industry.

Collaborations

Throughout his career, Nagatomo has worked alongside talented individuals such as Yoshinori Okumura and Ikuo Ogoh. Their collaborative efforts have led to advancements in semiconductor design and manufacturing processes.

Conclusion

Masao Nagatomo's contributions to semiconductor technology are noteworthy and have had a lasting impact on the industry. His innovative patents and collaborations continue to influence the development of advanced electronic devices.

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