The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 1991
Filed:
Apr. 26, 1989
Applicant:
Inventor:
Masao Nagatomo, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 35 ; 437 63 ; 437932 ;
Abstract
The present invention relates to a method of manufacturing a semiconductor device. In order to controllably introduce impurities into the side wall of a trench 2a by ion implantation impurity ions are directed at a predetermined angle into the side wall of the trench 2a provided in a wafer 2a and, for implantation thereof, at the same time, the wafer 2 is rotated around an ion implantation axis at a rotational speed related to the ion implantation current.