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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5112771 B1

PDFFull Text
Date of Patent:
May. 12, 1992

Filed:

Jun. 12, 1989

Method of fibricating a semiconductor device having a trench

Applicant:
Inventors:

Tatsuya Ishii, Hyogo, JP;

Yoji Mashiko, Hyogo, JP;

Masao Nagatomo, Hyogo, JP;

Michihiro Yamada, Hyogo, JP;

Assignee:

Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;

Attorney:

Lowe, Price, LeBlanc and Becker

Primary Examiner:

Olik Chaudhuri

Assistant Examiner:

G Fourson

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 67 ; 437 52 ;
Abstract

A semiconductor device having a trench (30) comprises a semiconductor substrate (11), a plurality of elements (13) provided on the semiconductor substrate, a trench (30) provided between the elements and an insulating material (12) embedded in the trench for isolating the elements. The trench has its bottom portion region enlarged in both sides. The semiconductor device is manufactured by enlarging the bottom portion region of the trench by etching.

Find Patent Forward Citations

Ishii, Tatsuya. (1992). Method of fibricating a semiconductor device having a trench (U.S. Patent No. 5112771). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5112771

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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