The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 1992
Filed:
Sep. 08, 1989
Yoshinori Okumura, Hyogo, JP;
Takayuki Matsukawa, Hyogo, JP;
Ikuo Ogoh, Hyogo, JP;
Masao Nagatomo, Hyogo, JP;
Hideki Genjo, Hyogo, JP;
Atsushi Hachisuka, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A memory cell of a semiconductor memory device comprises one MOS transistor (3) and one stacked capacitor (4). One of the source/drain regions (8a, 8b) of the MOS transistor is connected to a bit line (2a, 2b). The bit line is formed from a contact portion to the source/drain regions of the MOS transistor to a portion above the stacked capacitor. The bit line is formed of a metal having high melting point, a silicide of a metal having high melting point or a polycide. Since this material has low reflectance against exposing light, the precision in patterning the interconnection is improved.