Masafumi Shimbo

Title: The Innovative Contributions of Masafumi Shimbo

Introduction

Masafumi Shimbo is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 16 patents. His work focuses on advancing the capabilities and efficiency of semiconductor devices.

Latest Patents

One of his latest patents is an insulated gate semiconductor device using a compound semiconductor. This device features a channel region of compound semiconductor of one conductivity type, with source and drain regions of the other conductivity type. These regions are spaced apart by the channel region, and the device includes a gate insulation film and a gate electrode. Additionally, a silicon monocrystal thin film, having a thickness of 100 atoms or less, is inserted between the channel region and the gate insulation film. Another notable patent is a method of making a CMOS device with trench isolation. This semiconductor device is composed of a pair of N-type metal oxide semiconductor transistors formed on a P-type silicon substrate, along with P-type metal oxide semiconductor transistors formed on an N-type well. An isolation trench is disposed between the adjacent transistors, effectively isolating them from each other.

Career Highlights

Masafumi Shimbo has worked with notable companies such as Seiko Instruments Inc. and Seiko Instruments & Electronics Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Throughout his career, Shimbo has collaborated with esteemed colleagues, including Kenji Aoki and Tsuneo Yamazaki. These partnerships have contributed to the advancement of his projects and patents.

Conclusion

Masafumi Shimbo's contributions to semiconductor technology are noteworthy, with his innovative patents paving the way for advancements in the field. His work continues to influence the development of efficient semiconductor devices.