The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 1983
Filed:
Mar. 17, 1981
Applicant:
Inventor:
Masafumi Shimbo, Tokyo, JP;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148187 ; 29571 ; 29574 ;
Abstract
A method of fabricating a semiconductor device comprising forming an island-shaped multi-layered structure of oxides and nitrides on the surface of a semiconductor. The multi-layered structure is selectively etched to define diffusion windows for forming a semiconductor structure in the semiconductor surface having a central region of one conductivity type surrounded by another region of a different conductivity type. A second island-like multi-layered structure is formed and is etched for controlling the duration of the etching steps by controlling the amount that the masks lift off from the insulation layers subjected to etching. The etching is carried out by side etching.