The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 1989
Filed:
Aug. 31, 1987
Masafumi Shimbo, Tokyo, JP;
Seiko Instruments Inc., Tokyo, JP;
Abstract
A method of manufacturing semiconductor device wherein the self-alignment technique is employed to simplify the manufacturing process and includes the steps of successively depositing multiple layer masking films comprising a first, a second and a third masking films on an n-type Si region, forming an island region of the multiple layer films and a peripheral portion of the second masking film which is etched away, by side-etching, from the edges of the other masking films, selectively forming an oxidized film, selectively etching the first oxidized film using the second masking film as a mask and forming fine contact windows between the selectively formed oxidized film and the first masking film, depositing a semiconductor thin film, lifting-off the semiconductor thin film by removing the second and third masking films and leaving a portion of the semiconductor film which contacts the windows, oxidizing the surface of the semiconductor thin film and removing the first masking film.