The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 1982
Filed:
Apr. 14, 1980
Applicant:
Inventor:
Masafumi Shimbo, Tokyo, JP;
Assignee:
Kabushiki Kaisha Daini Seikosha, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29579 ; 29571 ; 29580 ; 148174 ; 148187 ; 148188 ; 156628 ; 156657 ; 156662 ; 357 22 ; 357 54 ; 357 56 ; 357 59 ;
Abstract
A method of fabricating a vertical static induction semiconductor device comprising depositing a polycrystalline silicon film on a single crystal silicon layer, and forming an insulating film comprised of silicon nitride on the polycrystalline film. The insulating film is selectively etched to form islands of the insulating film overlying areas where a gate region and a main electrode region of the semiconductor device are to be formed. An oxide film is formed on the surface regions exposed by etching, and the oxide film is used as a mask for controlling introduction of impurity atoms to form the gate region and the main electrode region.