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For the Inventor, By the Inventor

Poughkeepsie, NY, United States of America

Man Fai Ng

USPTO Granted Patents = 14 

Average Co-Inventor Count = 2.1

ph-index = 4

Forward Citations = 27(Granted Patents)


Company Filing History:

goldMedal14 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2010-2015

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14 patents (USPTO):Explore Patents
1. 8987110 - Semiconductor device fabrication method for improved isolation regions and defect-free active semiconductor material (2015-03-24),
2. 8765537 - Metal gate fill by optimizing etch in sacrificial gate profile (2014-07-01),
3. 8680624 - Methods for forming barrier regions within regions of insulating material resulting in outgassing paths from the insulating material and related devices (2014-03-25),
4. 8674438 - Semiconductor devices having stressor regions and related fabrication methods (2014-03-18),
5. 8518758 - ETSOI with reduced extension resistance (2013-08-27),
6. 8445342 - Short channel semiconductor devices with reduced halo diffusion (2013-05-21),
7. 8394691 - Semiconductor devices having stressor regions and related fabrication methods (2013-03-12),
8. 8390042 - Gate etch optimization through silicon dopant profile change (2013-03-05),
9. 8329515 - eFUSE enablement with thin polysilicon or amorphous-silicon gate-stack for HKMG CMOS (2012-12-11),
10. 8222093 - Methods for forming barrier regions within regions of insulating material resulting in outgassing paths from the insulating material and related devices (2012-07-17),
11. 8198170 - Semiconductor device fabrication method for improved isolation regions and defect-free active semiconductor material (2012-06-12),
12. 8124515 - Gate etch optimization through silicon dopant profile change (2012-02-28),
13. 8084828 - Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methods (2011-12-27),
14. 7763508 - Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methods (2010-07-27),

Title: Innovations by Man Fai Ng: Pioneering Semiconductor Technologies

Introduction

Man Fai Ng is an accomplished inventor based in Poughkeepsie, NY, with a remarkable portfolio of 14 patents. His groundbreaking work primarily focuses on advancements in semiconductor device fabrication methods, contributing significantly to the technology sector.

Latest Patents

Among his latest patents, one stands out as a notable achievement: a semiconductor device fabrication method for improved isolation regions and defect-free active semiconductor material. This innovative method enhances the structure of semiconductor devices by introducing layers of silicon and silicon dioxide, and utilizes a meticulous approach for creating isolation regions and optimizing the material properties. Another significant patent focuses on optimizing the etching process in metal gate fill for high-k metal gate electrodes, which reduces gate voids and promotes enhanced performance for semiconductor devices.

Career Highlights

Man Fai Ng is currently associated with GlobalFoundries Inc., a leading semiconductor foundry that specializes in providing advanced manufacturing services. His innovative contributions in the field not only showcase his technical skills but also reflect the forward-thinking culture at GlobalFoundries.

Collaborations

Throughout his career, Man Fai Ng has had the pleasure of collaborating with talented individuals such as Bin Yang and Rohit Pal. These partnerships have fostered an environment of innovation and creativity, enabling the team to push the boundaries of semiconductor technology further.

Conclusion

Man Fai Ng's contributions to the field of semiconductor technology are profound and impactful. With a strong focus on developing inventive methods for improving device structures, his work reflects a commitment to excellence and innovation in the semiconductor industry. As technology continues to evolve, inventors like Ng play a crucial role in shaping the future of electronic devices.

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