The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Sep. 07, 2012
Man Fai NG, Poughkeepsie, NY (US);
Bin Yang, Mahwah, NJ (US);
Man Fai Ng, Poughkeepsie, NY (US);
Bin Yang, Mahwah, NJ (US);
Globalfoundries Inc., Grand Cayman, KY;
Abstract
A high-k metal gate electrode is formed with reduced gate voids. An embodiment includes forming a replaceable gate electrode, for example of amorphous silicon, having a top surface and a bottom surface, the top surface being larger than the bottom surface, removing the replaceable gate electrode, forming a cavity having a top opening larger than a bottom opening, and filling the cavity with metal. The larger top surface may be formed by etching the bottom portion of the amorphous silicon at greater temperature than the top portion, or by doping the top and bottom portions of the amorphous silicon differently such that the bottom has a greater lateral etch rate than the top.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile