The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
May. 20, 2009
Man Fai NG, Poughkeepsie, NY (US);
Rohit Pal, Fishkill, NY (US);
Man Fai Ng, Poughkeepsie, NY (US);
Rohit Pal, Fishkill, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Improved semiconductor devices comprising metal gate electrodes are formed with reduced performance variability by reducing the initial high dopant concentration at the top portion of the silicon layer overlying the metal layer. Embodiments include reducing the dopant concentration in the upper portion of the silicon layer, by implanting a counter-dopant into the upper portion of the silicon layer, removing the high dopant concentration portion and replacing it with undoped or lightly doped silicon, and applying a gettering agent to the upper surface of the silicon layer to form a thin layer with the gettered dopant, which layer can be removed or retained.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile