The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2013

Filed:

Jun. 11, 2010
Applicants:

Bin Yang, Mahwah, NJ (US);

Man Fai NG, Poughkeepsie, NY (US);

Inventors:

Bin Yang, Mahwah, NJ (US);

Man Fai Ng, Poughkeepsie, NY (US);

Assignee:

Globalfoundries, Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

Apparatus for semiconductor device structures and related fabrication methods are provided. One method for fabricating a semiconductor device structure involves forming a gate structure overlying a region of semiconductor material, wherein the width of the gate structure is aligned with a <100> crystal direction of the semiconductor material. The method continues by forming recesses about the gate structure and forming a stress-inducing semiconductor material in the recesses.


Find Patent Forward Citations

Yang, Bin. (2013). Semiconductor devices having stressor regions and related fabrication methods (U.S. Patent No. 8394691). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8394691

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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