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For the Inventor, By the Inventor

Hsinchu, Taiwan

Mam-Tsung Wang

This inventor holds 25 USPTO granted patents, primarily in Non-Volatile Memory. Top assignees: Macronix International Co., Ltd., Harvatek Corporation, Other. Active years: 1998-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mam-Tsung Wang. Retrieved from https://idiyas.com/inventor/mam-tsung-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 12

Forward Citations = 392(Granted Patents)


Location History:

  • Hsing Chu, TW (1999 - 2000)
  • Hsinchu, TW (1998 - 2023)

Company Filing History:

goldMedal22 out of 3,609 
 
Macronix International Co., Ltd.
 patents
silverMedal2 out of 115 
 
Harvatek Corporation
 patents
bronzeMedal1 out of 834,570 
Other
 patents

Years Active: 1998-2023

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Areas of Expertise:
Non-Volatile Memory
Flash EEPROM
Mask ROM
LED Assembly
Optical Sensor
Electrostatic Discharge
Silicide Blocking
Memory Programming
Current Source Component
Photo Mask Pattern
Bit Line Leakage
Cell Structure
25 patents (USPTO):Explore Patents
1. 11658257 - Light source assembly, optical sensor assembly, and method of manufacturing a cell of the same (2023-05-23),
2. 11322542 - Light-emitting diode (LED) assembly and method of manufacturing an LED cell of the same (2022-05-03),
3. 6614687 - Current source component with process tracking characteristics for compact programmed Vt distribution of flash EPROM (2003-09-02),
4. 6455898 - Electrostatic discharge input protection for reducing input resistance (2002-09-24),
5. 6397377 - Method of performing optical proximity corrections of a photo mask pattern by using a computer (2002-05-28),
6. 6269017 - Multi level mask ROM with single current path (2001-07-31),
7. 6259140 - Silicide blocking process to form non-silicided regions on MOS devices (2001-07-10),
8. 6166955 - Apparatus and method for programming of flash EPROM memory (2000-12-26),
9. 6166943 - Method of forming a binary code of a ROM (2000-12-26),
10. 6140682 - Self protected stacked NMOS with non-silicided region to protect (2000-10-31),
11. 6130452 - Virtual ground flash cell with asymmetrically placed source and drain (2000-10-10),
12. 6121092 - Silicide blocking process to form non-silicided regions on MOS devices (2000-09-19),
13. 6055190 - Device and method for suppressing bit line column leakage during erase (2000-04-25),
14. 6046482 - Cell structure for mask ROM (2000-04-04),
15. 6040993 - Method for programming an analog/multi-level flash EEPROM (2000-03-21),

Title: The Innovative Journey of Mam-Tsung Wang

Introduction: Mam-Tsung Wang, a distinguished inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology and innovation.

Latest Patents: Mam-Tsung Wang's latest patents focus on cutting-edge advancements in semiconductor technology, including novel methods for enhancing chip performance and efficiency.

Career Highlights: With a career spanning over two decades, Mam-Tsung Wang has held key roles in leading tech companies, driving research and development efforts that have resulted in groundbreaking inventions.

Collaborations: Throughout his career, Mam-Tsung Wang has collaborated with top researchers, engineers, and industry experts to push the boundaries of technological innovation and bring revolutionary ideas to life.

Conclusion: Mam-Tsung Wang's relentless pursuit of innovation and his passion for pushing the limits of technology have solidified his reputation as a visionary inventor in the vibrant tech hub of Hsinchu, Taiwan.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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