The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2000
Filed:
Feb. 02, 1999
Applicant:
Inventors:
Meng-Hwang Liu, Taiwan, TW;
Cheng-Shang Lai, Taichung, TW;
Tao-Cheng Lu, Kaohsiung, TW;
Mam-Tsung Wang, Hsinchu, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438281 ; 438305 ;
Abstract
A semiconductor device is formed on a substrate having an ESD region and an internal region. A protective layer is formed over a portion of the ESD region to be protected from formation of silicide and silicide is formed on portions of the Internal and ESD region which remain unprotected by the protective layer. A portion of the protective layer is removed to form the remaining portions of the protective layer into sidewall spacers adjacent to a gate electrode included in the ESD region.