The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Oct. 08, 1999
Bing-Ying Wang, Hsin-Chu, TW;
Chun-Yi Yang, Hsin-Chu Hsien, TW;
Chun-Jung Lin, Hsin-Chu, TW;
Jui-Chin Chang, Tai-Chung Hsien, TW;
Mam-Tsung Wang, Hsin-Chu, TW;
Macronix International Co. Ltd., Hsin-Chu, TW;
Abstract
The present invention provides a method of performing optical proximity corrections of a photo mask pattern by using a computer. The photo mask pattern is formed on a photo mask which is used when performing photolithography for forming a predetermined original pattern by exposing a photo-resist layer in a predetermined area of a semiconductor wafer. The photo mask pattern is divided into a plurality of rectangular blocks. Each block can be bright or dark, and a least one side and two corners of the block are shared with another block. Each of shared corners is checked to find corners which may be affected by an optic proximity effect, and those corners are modified so as to prevent them from being affected by the optic proximity effect.