Matsumoto, Japan

Makoto Shimosawa

This inventor holds 7 USPTO granted patents. Top assignees: Fuji Electric Co., Ltd., Fuji Electric., Ltd.. Active years: 2012-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Makoto Shimosawa. Retrieved from https://idiyas.com/inventor/makoto-shimosawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 85.7

Average Co-Inventor Count = 1.5

ph-index = 1

Forward Citations = 16(Granted Patents)


Location History:

  • Kumamoto, JP (2012 - 2014)
  • Matsumoto, JP (2021 - 2023)

Company Filing History:


Years Active: 2012-2026

Loading Chart...
7 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Makoto Shimosawa

Introduction

Makoto Shimosawa is a prominent inventor based in Matsumoto, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of six patents. His work focuses on advanced methods of manufacturing semiconductor devices, which are crucial for modern electronics.

Latest Patents

Shimosawa's latest patents include a method of manufacturing a semiconductor device that features a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type at the surface of the first layer, and a third semiconductor layer of the first conductivity type selectively provided at the surface of the second layer. This innovative design incorporates a gate electrode embedded in a trench, which penetrates the second and third layers and reaches the first layer. Additionally, a thermal oxide film on the third layer has a thickness less than that of the gate insulating film. His patents also describe an interlayer insulating film on the thermal oxide film, a barrier metal on the inner surface of a contact hole selectively opened in the thermal oxide film and the interlayer insulating film, and a metal plug embedded in the contact hole on the barrier metal. This design allows for an electrode to be electrically connected to the second and third layers via the barrier metal and the metal plug.

Another notable patent describes a semiconductor device that includes a drift region of first conductivity type, a base region of second conductivity type, and an emitter region of first conductivity type provided at the front surface of the semiconductor substrate. This device also features a contact region of second conductivity type with a higher doping concentration than the base region, along with a contact trench portion and barrier layers that enhance its performance.

Career Highlights

Shimosawa has built a successful career at Fuji Electric Co., Ltd., where he has been instrumental in advancing semiconductor technologies. His innovative approaches have led to significant improvements in device performance and manufacturing processes.

Collaborations

Throughout his career, Shimosawa has collaborated with notable colleagues, including Nobuyuki Masuda and Takeyoshi Nishimura. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Makoto Shimosawa's contributions to semiconductor technology exemplify the spirit of innovation. His patents and work at Fuji Electric Co., Ltd. have significantly impacted the industry, paving the way for advancements in electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…