The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Jul. 01, 2019
Fuji Electric Co., Ltd., Kawasaki, JP;
Makoto Shimosawa, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
In a method of manufacturing a semiconductor device, a gate insulating film is formed at a first surface of a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type is formed at the first surface; a gate electrode is formed on the gate insulating film; the gate insulating film is selectively removed; a thermal oxide film is formed at a surface of the second semiconductor layer; a third semiconductor layer of the first conductivity type is selectively formed at the surface of the second semiconductor layer; an interlayer insulating film is formed on the thermal oxide film; a contact hole is selectively formed to expose the third semiconductor layer; a barrier metal is formed in the contact hole; and a metal plug is embedded in the contact hole on barrier metal by a CVD method that uses a metal halide.