The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Dec. 23, 2022
Fuji Electric Co., Ltd., Kawasaki, JP;
Motoyoshi Kubouchi, Matsumoto-city, JP;
Makoto Shimosawa, Matsumoto-city, JP;
Makoto Endou, Matsumoto-city, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
Provided is a semiconductor device including: a drift region of a first conductivity type provided in a semiconductor substrate; a base region of a second conductivity type provided above the drift region; an emitter region of a first conductivity type provided above the base region; a second conductivity type region provided above the drift region; a plurality of trench portions extending in a predetermined extending direction; and an interlayer dielectric film provided above the semiconductor substrate and includes a first contact hole portion and second contact hole portion, in which the second conductivity type region and the emitter region are provided alternately in the extending direction, the first contact hole portion is provided alternately with the second contact hole portion in the extending direction, and a lower end of the first contact hole portion is provided at a different depth from a lower end of the second contact hole portion.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile