Makoto Igarashi

Title: The Innovative Contributions of Makoto Igarashi

Introduction

Makoto Igarashi is a prominent inventor based in Tama, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the formation of silicon nitride layers and thin film deposition processes. With a total of four patents to his name, Igarashi's work has advanced the capabilities of modern manufacturing techniques.

Latest Patents

Igarashi's latest patents include a method and system for forming a silicon nitride layer using a low radio frequency plasma process. This innovative method involves forming a silicon nitride layer over a substrate by introducing a silicon precursor and a nitrogen reactant into the reaction chamber. The process applies different plasma powers at varying frequencies during the deposition and treatment steps. Another notable patent focuses on methods and apparatuses for flowable gap-fill, which describes cyclical processes for the deposition of thin films followed by thermal annealing. These advancements are crucial for improving the efficiency and effectiveness of semiconductor manufacturing.

Career Highlights

Throughout his career, Makoto Igarashi has been associated with Asm IP Holding B.V., where he has played a vital role in developing cutting-edge technologies. His expertise in semiconductor processes has positioned him as a key figure in the industry, contributing to advancements that enhance production capabilities.

Collaborations

Igarashi has collaborated with notable colleagues, including Naoto Tsuji and Ippei Yanagisawa. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas, further driving advancements in their field.

Conclusion

Makoto Igarashi's contributions to semiconductor technology through his patents and collaborative efforts highlight his importance as an inventor. His work continues to influence the industry, paving the way for future innovations in manufacturing processes.