Asm IP Holding B.v.

Makoto Igarashi

Yukihiro Mori

Hideaki Fukuda

Naoto Tsuji

Timothee Blanquart

Takahiro Onuma

Aurélie Kuroda

Yuko Kengoyama

Shinya Yoshimoto

Ippei Yanagisawa

Miho Shimotori

Rene Henricus Jozef Vervuurt

Ling Chi Hwang

Methods of forming treated silicon nitride layers are disclosed. Exemplary methods include forming a silicon nitride layer overlying the substrate by providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a nitrogen reactant to the reaction chamber for a reactant pulse period, during a deposition process applying a first plasma power having a first frequency for a first plasma power period, and during a treatment step, applying a second plasma power having a second frequency for a second plasma power period.

Method and system for forming silicon nitride layer using low radio frequency plasma process

In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.

Methods and apparatuses for flowable gap-fill

A method and system for forming a conformal silicon carbon nitride layer overlying a gap on a surface of a substrate are disclosed. Exemplary methods include forming conformal silicon carbon nitride material within the gap and treating the conformal silicon carbon nitride material to form treated silicon carbon nitride material. The deposition time is relatively short to mitigate flow of the conformal silicon carbon nitride material within the gap.

Method and system for forming a conformal silicon carbon nitride layer and structure formed using same

Examples of a substrate processing device include an annular distribution ring, a plurality of connection plates continued to the distribution ring and having non-uniform impedances, a shower plate electrically connected to the plurality of connection plates, and a stage provided below the shower plate so as to face the shower plate.

Substrate processing device having connection plates, substrate processing method

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Tama, Japan

Makoto Igarashi