The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Mar. 25, 2022
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Yuko Kengoyama, Kawasaki, JP;
Makoto Igarashi, Fuchu, JP;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/345 (2013.01); C23C 16/45553 (2013.01); H01J 37/32082 (2013.01); H01J 37/32449 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01);
Abstract
Methods of forming treated silicon nitride layers are disclosed. Exemplary methods include forming a silicon nitride layer overlying the substrate by providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a nitrogen reactant to the reaction chamber for a reactant pulse period, during a deposition process applying a first plasma power having a first frequency for a first plasma power period, and during a treatment step, applying a second plasma power having a second frequency for a second plasma power period.