Yuko Kengoyama

Title: Yuko Kengoyama: Innovator in Silicon Nitride and Silicon Oxide Technologies

Introduction

Yuko Kengoyama is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor materials, particularly in the development of methods for forming silicon nitride and silicon oxide layers. With a total of 5 patents to his name, Kengoyama continues to push the boundaries of innovation in his field.

Latest Patents

Kengoyama's latest patents include a method and system for forming a silicon nitride layer using a low radio frequency plasma process. This innovative method involves forming a silicon nitride layer over a substrate by providing a silicon precursor and a nitrogen reactant in a controlled manner. The process applies different plasma powers during the deposition and treatment steps to achieve optimal results. Another notable patent is for a method of depositing a silicon oxide film with improved quality using plasma-enhanced atomic layer deposition (PEALD) with bis(diethylamino)silane. This method enhances the quality of the silicon oxide film by carefully controlling the deposition environment and temperature.

Career Highlights

Kengoyama is currently employed at ASM IP Holding B.V., where he continues to develop advanced technologies in semiconductor manufacturing. His work has been instrumental in improving the efficiency and quality of silicon-based materials used in various applications.

Collaborations

Throughout his career, Kengoyama has collaborated with notable colleagues, including Ryu Nakano and Hidemi Suemori. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Yuko Kengoyama's contributions to the field of semiconductor materials are noteworthy. His innovative patents and collaborative efforts highlight his commitment to advancing technology in this critical area.