Minato-ku, Japan

Makiko Tange


Average Co-Inventor Count = 5.2

ph-index = 2

Forward Citations = 22(Granted Patents)


Location History:

  • Minato-ku, JP (2012)
  • Kanagawa-ken, JP (2013)

Company Filing History:


Years Active: 2012-2013

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4 patents (USPTO):Explore Patents

Title: Makiko Tange: Innovator in Nonvolatile Memory Technology

Introduction

Makiko Tange is a prominent inventor based in Minato-ku, Japan. She has made significant contributions to the field of nonvolatile memory devices, holding a total of 4 patents. Her innovative work has garnered attention in the technology sector, particularly for its applications in memory storage solutions.

Latest Patents

One of her latest patents is for a nonvolatile memory device and method for manufacturing the same. According to one embodiment, this device includes a substrate, a first electrode, a second electrode, and a memory. The first electrode is provided on the substrate, while the second electrode crosses over the first electrode. The memory portion is situated between these two electrodes. Notably, at least one of the areas of the memory portion surfaces opposed to the electrodes is smaller than the area of the cross surface of the electrodes that are opposed to each other by the crossing. Another significant patent involves a sulfuric acid electrolysis process, showcasing her diverse expertise in innovative technologies.

Career Highlights

Throughout her career, Makiko Tange has worked with notable companies such as Chlorine Engineers Corporation and Toshiba Corporation. Her experience in these organizations has allowed her to develop and refine her skills in the field of memory technology.

Collaborations

Some of her coworkers include Naoya Hayamizu and Masaaki Kato, who have collaborated with her on various projects, contributing to her success as an inventor.

Conclusion

Makiko Tange's contributions to nonvolatile memory technology and her innovative patents highlight her role as a leading inventor in her field. Her work continues to influence advancements in memory storage solutions.

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