Toshiba Corporation

Shibaura Mechatronics Corporation

Chlorine Engineers Corp., Ltd.

Kabushiki Kaisha Toshiba

Makiko Tange

Naoya Hayamizu

Masaaki Kato

Nobuo Kobayashi

Yoshiaki Kurokawa

Hiroki Domon

Yusuke Ogawa

Hiroyuki Fukumizu

Takamichi Kishi

Yoshiyuki Seya

According to one embodiment, a nonvolatile memory device includes a substrate, a first electrode, a second electrode, and a memory. The first electrode is provided on the substrate. The second electrode crosses on the first electrode. The memory portion is provided between the first electrode and the second electrode. At least one of an area of a first memory portion surface of the memory portion opposed to the first electrode and an area of a second memory portion surface of the memory portion opposed to the second electrode is smaller than an area of a cross surface of the first electrode and the second electrode opposed to each other by the crossing.

Nonvolatile memory device and method for manufacturing the same

Sulfuric acid electrolysis process wherein;

Sulfuric acid electrolysis process

The cleaning method by electrolytic sulfuric acid and the manufacturing method of semiconductor device comprising:

Cleaning method by electrolytic sulfuric acid and manufacturing method of semiconductor device

In a sulfuric acid electrolytic cell to electrolyze sulfuric acid supplied to an anode compartment and a cathode compartment comprising a diaphragm, said anode compartment and said cathode compartment separated by said diaphragm, a cathode provided in said cathode compartment and a conductive diamond anode provided in said anode compartment, as said conductive diamond anode, a conductive diamond film is formed on the surface of said conductive substrate, the rear face of said conductive substrate is pasted, with conductive paste, on an current collector comprising a rigid body with size equal to, or larger than, said conductive substrate, an anode compartment frame constituting said anode compartment is contacted via gasket with the periphery on the side of the conductive diamond film of said diamond anode, said diaphragm is contacted with the front face of said anode compartment, further, with the front face of said diaphragm, the cathode compartment frame constituting said cathode compartment, a gasket, and said cathode are contacted in sequence, the rear face of said cathode is pasted with conductive paste to the current collector comprising a rigid body with size equal to, or larger than, said cathode and electric power is supplied from one current collector to the other current collector via said conductive paste.

Sulfuric acid electrolytic cell and a sulfuric acid recycle type cleaning system applying the sulfuric acid electrolytic cell

Growing community of inventors

Minato-ku, Japan

Makiko Tange