Morgan Hill, CA, United States of America

Mahmud M Assar

This inventor holds 40 USPTO granted patents, primarily in Magnetic Memory Technology. Top assignees: Lexar Media, Inc., Avalanche Technology, Inc., Cirrus Logic Inc.. Active years: 1990-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mahmud M Assar. Retrieved from https://idiyas.com/inventor/mahmud-m-assar

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 75.0

Average Co-Inventor Count = 2.6

ph-index = 23

Forward Citations = 2,924(Granted Patents)


Location History:

  • Morgan Hill, CA (US) (1990 - 2012)
  • Aptos, CA (US) (2011 - 2014)

Company Filing History:


Years Active: 1990-2014

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Areas of Expertise:
Magnetic Memory
Flash-RAM
Non-Volatile Memory
Memory Devices
Operating Modes
Mass Storage Architecture
Wear Leveling
Voltage Detection
Programmable Tiles
Charge Pump
40 patents (USPTO):Explore Patents

Title: Mahmud M Assar: Innovator in Magnetic Memory Technology

Introduction: Mahmud M Assar, based in Morgan Hill, California, is an accomplished inventor and innovator known for his significant contributions to the field of magnetic memory technology. With a portfolio of 40 patents, he has been pivotal in developing cutting-edge technologies that enhance data storage efficiency and performance.

Latest Patents: Among Mahmud's latest innovations are two notable patents. The first is a "High capacity low cost multi-state magnetic memory," which features a multi-state current-switching magnetic memory element. This innovative design incorporates a stack of magnetic tunneling junctions (MTJ) separated by a non-magnetic layer, enabling the storage of more than one bit of information. Different levels of current applied to this memory element facilitate switching to various states, leading to enhanced functionality. The second patent is for a "Non-volatile flash-RAM memory with magnetic memory," which consists of non-volatile random access memory (RAM) integrated on a monolithic die. This technology includes non-volatile page-mode memory situated on top of the non-volatile RAM, with stacks of magnetic memory cells arranged in a three-dimensional structure to achieve higher density and lower costs.

Career Highlights: Mahmud M Assar has had a notable career, having worked with prominent companies such as Lexar Media, Inc. and Avalanche Technology, Inc. His work in these organizations has contributed significantly to advancements in memory technologies.

Collaborations: Throughout his career, Mahmud has collaborated with distinguished professionals in the field, including coworkers Petro Estakhri and Parviz Keshtbod. These partnerships have further propelled his innovative efforts and research initiatives.

Conclusion: Mahmud M Assar stands out as a leading innovator in magnetic memory technology, with a robust portfolio of patents that underscore his expertise and dedication to enhancing data storage solutions. His contributions continue to influence the trajectory of memory technology, making a lasting impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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